| PART |
Description |
Maker |
| PTF080101M |
High Power RF LDMOS Field Effect Transistor 10 W, 450 ?960 MHz
|
Infineon Technologies AG
|
| PTFB241402F |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ?2400 MHz
|
Infineon Technologies AG
|
| PTFB213004F |
High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| PTF080101S PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W 860-960MHZ
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
|
INFINEON[Infineon Technologies AG]
|
| PTF210451 PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| MAPLST2122-090CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
|
Tyco Electronics
|
| MAPLST1820-030CF |
RF Power Field Effect Transistor LDMOS, 1800 - 2000 MHz, 30W, 26V
|
Tyco Electronics
|
| IFS100V12PT4 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
| IFS75B12N3T4B31 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
| PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
